The devices released today are optimized for TTL/CMOS direct logic level interfaces; drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors; battery operated systems; and solid-state relays. The MOSFETs’ sealed TO-205AD package is designed to withstand the higher temperatures of military and aerospace applications.
The 60 V 2N6660JANTX/JANTXV offers low on-resistance of 1.3 ? typical at 10 V, a low gate-source threshold voltage of 1.7 V, and fast switching speeds of 8 ns. The 90 V 2N6661JANTX/JANTXV provides low on-resistance of 3.6 ? typical at 10 V, a low gate-source threshold voltage of 1.6 V, and fast switching speeds of 6 ns. Both devices feature low input and output leakage, and provide low input capacitance of 35 pF typical.
The 2N6660JANTXV and 2N6661JANTXV feature a 100 % internal visual (pre-cap) inspection per MIL-PRF-19500. Vishay’s additional hi-rel capabilities include Group A, Group B, Group C, and Group E testing, in addition to a lower cost -2 flow option (MIL-STD-750 visual and processing).
Samples and production quantities of the JAN-qualified MOSFETs are available now, with lead times of 16 weeks for larger orders.
Visit Vishay Intertechnology at www.vishay.com
